Detailed modeling of the epitaxial growth of GaAs nanowires

被引：13

作者：

De Jong, E. ^{[1
]}

LaPierre, R. R. ^{[2
]}

Wen, J. Z. ^{[1
]}

机构：

[1] Univ Waterloo, Waterloo, ON N2L 3G1, Canada

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

MOLECULAR-BEAM EPITAXY; SURFACE-DIFFUSION; KINETICS; ADATOMS; SIMULATION; 1ST-PRINCIPLES; NUCLEATION; GAAS(100); MECHANISM; MIGRATION;

D O I：

10.1088/0957-4484/21/4/045602

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A detailed continuum model is presented for predicting the growth characteristics of GaAs nanowires during chemical beam epitaxy. The model describes the transport processes of Ga and As adatoms on the substrate and nanowire sidewalls, and through the nanoparticle and the nanowire-catalyst interface (NCI). The growth mechanisms of nanowires within the NCI are described using an extended step-flow kinetic model. The vapor-liquid-solid and vapor-solid-solid growth mechanisms are both described in the kinetic model. The growth rate of the nanowires, the surface and bulk concentrations of adatoms, and the role of transport processes of Ga and As adatoms during chemical beam epitaxy were investigated. The growth mechanisms of the nanowires were found to vary with increasing length of the nanowire.

引用

页数：10

共 33 条

[1] A kinetic model for step flow growth in molecular beam epitaxy [J].