Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids

被引：22

作者：

Tsai, Chih-Tsung ^{[1
]}

Liu, Po-Tsun

Chang, Ting-Chang

Wang, Chen-Wen

Yang, Po-Yu

Yeh, Fon-Shan

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[5] Natl Sun Yat Sen Univ, Inst electroopt Engn, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 07期

关键词：

amorphous-silicon thin-film transistors (a-Si : HTFTs); density of states (DOSs); supercritical CO2 (SCCO2); fluids technology;

D O I：

10.1109/LED.2007.897869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, supercritical CO2 (SCCO2) fluids technology is employed for the first time to effectively passivate the defect states in hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) at low temperature (150 degrees C). With the high transport and diffusion properties of SCCO2 fluids, it is proposed to act as a transporter in delivering the H2O molecules into the amorphous-silicon film and repairing defect states by the H2O molecules. In addition, the propyl alcohol is used as the surfactant between nonpolar-SCCO2 fluids and polar-H2O molecules for mingling H2O molecules uniformly with the SCCO2 fluids. After the treatment Of SCCO2 fluids mixed with water and propyl alcohol, the a-Si:H TFT exhibited superior transfer characteristics and lower threshold voltage. The improvement in electrical characteristics could be verified by the significant reduction of density of states in the mobility gap of amorphous-silicon.

引用

页码：584 / 586

页数：3

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