STM studies of submonolayer coverages of Ag on Ge(111)

被引:25
作者
Spence, DJ [1 ]
Tear, SP [1 ]
机构
[1] Univ York, Dept Phys, York YO1 5DD, N Yorkshire, England
关键词
adatoms; germanium; low-index single crystal surfaces; metal-semiconductor interfaces; scanning tunnelling microscopy; silver; surface relaxation and reconstruction;
D O I
10.1016/S0039-6028(98)80014-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Submonolayer coverages of Ag on Ge(111) have been studied under ultra-high vacuum using STM. Atomically resolved images of the (root 33 x root 33)R30 degrees reconstruction have been obtained. The images obtained from the 4 x4 structure are strongly dependent upon the bias voltage polarity, indicating a significant influence from electronic effects. A new model is proposed which has the reconstruction occurring within the top bi-layer of an unreconstructed Ge(111) surface. STM images of the (root 33 x root 33)R30 degrees reconstruction show a structure very similar to that obtained for Ag/Si(111), indicating that the surface is a honeycomb-chained-trimer structure. Images have also been obtained of 3 x 1 and 5 x 1 regions and possible models for these structures are proposed. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:91 / 104
页数:14
相关论文
共 53 条
[11]   RECONSTRUCTION OF THE SI(111) SURFACE-INDUCED BY ALKALI-METALS [J].
FAN, WC ;
IGNATIEV, A .
SURFACE SCIENCE, 1993, 296 (03) :352-357
[12]   METAL-ADSORBATE-INDUCED SI(111)-(1X3) RECONSTRUCTION [J].
FAN, WC ;
IGNATIEV, A .
PHYSICAL REVIEW B, 1990, 41 (06) :3592-3595
[13]  
FUJIKAWA T, 1991, J PHYS SOC JPN, V59, P3750
[14]   STRUCTURAL AND ELECTRONIC EVOLUTION ON THE GE(111)-AG SURFACE [J].
GOTHELID, M ;
HAMMAR, M ;
KARLSSON, UO ;
WIGREN, C ;
LELAY, G .
PHYSICAL REVIEW B, 1995, 52 (19) :14104-14110
[15]   INITIAL GROWTH OF SILVER ON GE(111) STUDIED BY SCANNING-TUNNELING-MICROSCOPY [J].
HAMMAR, M ;
GOTHELID, M ;
KARLSSON, UO ;
FLODSTROM, SA .
PHYSICAL REVIEW B, 1993, 47 (23) :15669-15674
[16]   NUCLEATION, GROWTH AND THE INTERMEDIATE LAYER IN AG/SI(100) AND AG SI(111) [J].
HANBUCKEN, M ;
FUTAMOTO, M ;
VENABLES, JA .
SURFACE SCIENCE, 1984, 147 (2-3) :433-450
[17]   SURFACE-STRUCTURE STUDY OF SI(111) SQUARE-ROOT-3XSQUARE-ROOT-3-AG BY INCIDENT BEAM ROCKING AES METHOD [J].
HORIO, Y ;
ICHIMIYA, A .
SURFACE SCIENCE, 1985, 164 (2-3) :589-601
[18]   ATOMIC GEOMETRY OF GE(111) ROOT-3X-ROOT-3R30-DEGREES-AG DETERMINED BY LOW-ENERGY-ELECTRON DIFFRACTION [J].
HUANG, H ;
OVER, H ;
TONG, SY ;
QUINN, J ;
JONA, F .
PHYSICAL REVIEW B, 1994, 49 (19) :13483-13487
[19]   RHEED INTENSITY ANALYSIS OF SI(111) SQUARE-ROOT-3 X SQUARE-ROOT-3-AG STRUCTURE [J].
ICHIMIYA, A ;
KOHMOTO, S ;
FUJII, T ;
HORIO, Y .
APPLIED SURFACE SCIENCE, 1989, 41-2 :82-87
[20]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF ORDERED SINGLE AND MULTIPLE LAYERS OF NA ON THE SI(111) SURFACE [J].
JEON, D ;
HASHIZUME, T ;
SAKURAI, T ;
WILLIS, RF .
PHYSICAL REVIEW LETTERS, 1992, 69 (09) :1419-1422