Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

被引：65

作者：

Chang, S. J. ^{[1
]}

Shen, C. F.

Chen, W. S.

Kuo, C. T.

Ko, T. K.

Shei, S. C.

Sheu, J. K.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[5] Epistar Corp, Hsinshi 744, Taiwan

[6] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 01期

关键词：

D O I：

10.1063/1.2753726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under 20 mA current injection, it was found that forward voltages were 3.24, 3.25, and 3.24 V while the LED output powers were 11.7, 12.6, and 13.3 mW for the conventional ITO LED, ITO LED patterned with 1.75 mu m holes, and ITO LED patterned with 0.85 mu m holes, respectively. (C) 2007 American Institute of Physics.

引用

页数：3

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