Development of natural habit of large free-nucleated AlN single crystals

被引：16

作者：

Epelbaum, B. M.

Nagata, S.

Bickermann, M.

Heimann, P.

Winnacker, A.

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, D-91058 Erlangen, Germany

[2] JFE Min Co Ltd, Funct Mat Dev Ctr, Res Labs, Chuou Ku, Chiba 2600826, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 06期

关键词：

ALUMINUM NITRIDE; SEEDED GROWTH;

D O I：

10.1002/pssb.200674835

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Well-shaped freestanding crystals of aluminum nitride up to 25 mm in length have been grown in tungsten crucibles using physical vapor transport (PVT) method. The platelet crystals exhibit characteristic asymmetric habit with largest flat being a pseudo-facet build by alternating (1 0 (1) over bar 0) facets. Pronounced true facets are Al-terminated (0001) and adjacent {10 (1) over bar2} facets, with one of them growing much larger than others. The analysis of formation history of freestanding AlN crystals made it possible to explain their habit, very unusual for wurtzite-type structure. Growth of freestanding AlN starts from a long needle formed along the [11 (2) over bar0] direction at lower temperature of 1900-2000 degrees C and continues by needle expansion and thickening along mainly [0001] direction, leading to asymmetric platelet. In such geometry only one extended (10 (1) over bar2) facet can be developed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1780 / 1783

页数：4

共 9 条

[1] Orientation-dependent properties of aluminum nitride single crystals [J].

Bickermann, M. ;

Heimann, P. ;

Epelbaum, B. M. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1902-1906

[2] Approaches to seeded PVT growth of AIN crystals [J].

Epelbaum, B. M. ;

Bickermann, M. ;

Winnacker, A. .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E479-E484

[3] Natural growth habit of bulk AlN crystals [J].

Epelbaum, BM ;

Seitz, C ;

Magerl, A ;

Bickermann, M ;

Winnacker, A .

JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) :577-581

[4] Seeded growth of AlN on N- and Al-polar ⟨0 0 0 1⟩ AlN seeds by physical vapor transport [J].

Herro, ZG ;

Zhuang, D ;

Schlesser, R ;

Collazo, R ;

Sitar, Z .

JOURNAL OF CRYSTAL GROWTH, 2006, 286 (02) :205-208

[5]

Lely J.A., 1955, Berichte der Deutschen Keramischen Gesellschaft, V32, P229

[6] MORPHOLOGIE UND WACHSTUMSMECHANISMUS VON AIN-EINKRISTALLEN [J].

PASTRNAK, J ;

ROSKOVCOVA, L .

PHYSICA STATUS SOLIDI, 1964, 7 (01) :331-338

[7] Seeded growth of AlN bulk single crystals by sublimation [J].

Schlesser, R ;

Dalmau, R ;

Sitar, Z .

JOURNAL OF CRYSTAL GROWTH, 2002, 241 (04) :416-420

[8] Fabrication of native, single-crystal AlN substrates [J].

Schowalter, LJ ;

Slack, GA ;

Whitlock, JB ;

Morgan, K ;

Schujman, SB ;

Raghothamachar, B ;

Dudley, M ;

Evans, KR .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :1997-2000

[9] SOME PROPERTIES OF ALUMINUM NITRIDE [J].

TAYLOR, KM ;

LENIE, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (04) :308-314

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