Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

被引：21

作者：

Jia, C. H. ^{[1
]}

Chen, Y. H. ^{[1
]}

Zhou, X. L. ^{[1
]}

Yang, A. L. ^{[1
]}

Zheng, G. L. ^{[1
]}

Liu, X. L. ^{[1
]}

Yang, S. Y. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 99卷 / 02期

基金：

中国国家自然科学基金;

关键词：

BATIO3; SRTIO3;

D O I：

10.1007/s00339-010-5599-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48 +/- 0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO3. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO3. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.

引用

页码：511 / 514

页数：4

共 23 条

[1] Band offsets at heterojunctions between SrTiO3 and BaTiO3 and Si(100) [J].

Amy, F ;

Wan, AS ;

Kahn, A ;

Walker, FJ ;

McKee, RA .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) :1635-1639

[2] 2-PHOTON ABSORPTION AND ANISOTROPIC TRANSIENT ENERGY-TRANSFER IN BATIO3 WITH 1-PSEC EXCITATION [J].

BOGGESS, TF ;

WHITE, JO ;

VALLEY, GC .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (12) :2255-2258

[3] Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures [J].

Brandt, Matthias ;

Frenzel, Heiko ;

Hochmuth, Holger ;

Lorenz, Michael ;

Grundmann, Marius ;

Schubert, Juergen .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (03) :1789-1793

[4] Experimental determination of valence band maxima for SrTiO3, TiO2, and SrO and the associated valence band offsets with Si(001) [J].

Chambers, SA ;

Droubay, T ;

Kaspar, TC ;

Gutowski, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04) :2205-2215

[5] Measurement of Zn0.95Cd0.05O/ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy -: art. no. 192106 [J].

Chen, JJ ;

Ren, F ;

Li, YJ ;

Norton, DP ;

Pearton, SJ ;

Osinsky, A ;

Dong, JW ;

Chow, PP ;

Weaver, JF .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[6] BAND-OFFSET TRANSITIVITY IN STRAINED (001) HETEROINTERFACES [J].

FOULON, Y ;

PRIESTER, C .

PHYSICAL REVIEW B, 1992, 45 (11) :6259-6262

[7] Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy [J].

Jia, C. H. ;

Chen, Y. H. ;

Zhou, X. L. ;

Yang, A. L. ;

Zheng, G. L. ;

Liu, X. L. ;

Yang, S. Y. ;

Wang, Z. G. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (09)

[8] Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD [J].

Jia, C. H. ;

Chen, Y. H. ;

Liu, G. H. ;

Liu, X. L. ;

Yang, S. Y. ;

Wang, Z. G. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (01)

[9] High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates [J].

Kang, KyongTae ;

Lim, Mi-Hwa ;

Kim, Ho-Gi ;

Kim, Il-Doo ;

Hong, Jae-Min .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[10] Photoemission (XPS and XPD) study of epitaxial LaAlO3 fiim grown on SrTiO3(001) [J].

El Kazzi, M. ;

Merckling, C. ;

Delhaye, G. ;

Arzel, L. ;

Grenet, G. ;

Bergignat, E. ;

Hollinger, G. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (06) :954-958

← 1 2 3 →