Etching of diamond (100) surface by atomic hydrogen: Real-time observation by reflection high energy electron diffraction

被引:4
作者
Komatsu, S
Okada, K
Chou, SB
Aizawa, T
Shigetani, H
Tanaka, J
Sato, Y
机构
[1] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 305, Japan
[2] Taiyo Yuden, Gunma 37033, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1998年 / 16卷 / 02期
关键词
D O I
10.1116/1.581479
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Progress of etching of diamond (100) surface by atomic hydrogen was observed in real time with the help of reflection high energy reflection diffraction. The initial 1x1 pattern that indicates smooth two dimensional extension of the crystal surface transformed into the pattern corresponding to the (110) reciprocal lattice plane that indicates surface roughening. Ex situ atomic force microscope observation of the etched surface revealed a lot of shallow etch pits with a few nm in depth and a few degrees in the slope of the pit. It is supposed that deposition is effective against etching in actual chemical vapor deposition conditions partially because of the difference in their favorable temperatures, in addition to the absolute difference in their rates. (C) 1998 American Vacuum Society. [S0734-2101(98)02102-2].
引用
收藏
页码:749 / 753
页数:5
相关论文
共 13 条
[1]   INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY [J].
CHUA, LH ;
JACKMAN, RB ;
FOORD, JS ;
CHALKER, PR ;
JOHNSTON, C ;
ROMANI, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (06) :3033-3039
[2]   Stepped growth and etching of (001)diamond [J].
Hayashi, K ;
Yamanaka, S ;
Okushi, H ;
Kajimura, K .
DIAMOND AND RELATED MATERIALS, 1996, 5 (09) :1002-1005
[3]   EFFECT OF ATOMIC-HYDROGEN ON THE SURFACE-TOPOGRAPHY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS - AN ATOMIC-FORCE MICROSCOPY STUDY [J].
JOHANSSON, E ;
CARLSSON, JO .
DIAMOND AND RELATED MATERIALS, 1995, 4 (02) :155-163
[4]   Structural stability of hydrogenated (100) surface of cubic boron nitride in comparison with diamond [J].
Komatsu, S ;
Yarbrough, W ;
Moriyoshi, Y .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :7798-7805
[5]   THE PREPARATION AND CHARACTERIZATION OF LOW SURFACE-ROUGHNESS (111) AND (100) NATURAL DIAMONDS BY HYDROGEN PLASMA [J].
KUTTEL, OM ;
DIEDERICH, L ;
SCHALLER, E ;
CARNAL, O ;
SCHLAPBACH, L .
SURFACE SCIENCE, 1995, 337 (1-2) :L812-L818
[6]  
MAKI T, 1992, JPN J APPL PHYS 2, V31, pL1446, DOI 10.1143/JJAP.31.L1446
[7]   REFLECTION ELECTRON-MICROSCOPE AND SCANNING TUNNELING MICROSCOPE OBSERVATIONS OF CVD DIAMOND (001) SURFACES [J].
SASAKI, H ;
AOKI, M ;
KAWARADA, H .
DIAMOND AND RELATED MATERIALS, 1993, 2 (09) :1271-1276
[8]   EPITAXIAL-GROWTH OF HIGH-QUALITY DIAMOND FILM BY THE MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD [J].
SHIOMI, H ;
TANABE, K ;
NISHIBAYASHI, Y ;
FUJIMORI, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01) :34-40
[9]   DEUTERIUM ATOM INTERACTION WITH DIAMOND (100) STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
SMENTKOWSKI, VS ;
JANSCH, H ;
HENDERSON, MA ;
YATES, JT .
SURFACE SCIENCE, 1995, 330 (02) :207-226
[10]   CRACKING EFFICIENCY OF HYDROGEN WITH TUNGSTEN FILAMENT IN MOLECULAR-BEAM EPITAXY [J].
SUTOH, A ;
OKADA, Y ;
OHTA, S ;
KAWABE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (10B) :L1379-L1382