Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

被引：49

作者：

Lee, JS ^{[1
]}

Choi, YK

Ha, DW

Balasubramanian, S

King, TJ

Bokor, J

机构：

[1] Univ Texas, Dept Elect Engn, Richardson, TX 75083 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 03期

关键词：

double gate; FinFET; hydrogen anneal; low-frequency noise; silicon-on-insulator (SOI); ultrathin body;

D O I：

10.1109/LED.2003.809526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hydrogen annealing process has been used to improve surface roughness of Si-fin in CMOS FinFETs for the first time. The hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to hydrogen annealing. These results suggest that the hydrogen annealing is very effective for improving the device performance and for attaining a high-quality surface of the etched Si-fin.

引用

收藏

页码：186 / 188

页数：3

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