Surface order evaluation of the heteroepitaxial diamond film grown on an inclined β-SiC(001)

被引：4

作者：

Kono, S

Goto, T

Abukawa, T

Wild, C

Koidl, P

Kawarada, H

机构：

[1] Tohoku Univ, Sci Measurements Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

[3] Waseda Univ, Sch Sci & Engn, Shinjyuku Ku, Tokyo 1698555, Japan

[4] Japan Sci & Technol, CREST, Shinjyuku Ku, Tokyo 1698555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7B期

关键词：

heteroepitaxial diamond film; C(001); diamond surface; micro-electron beam RHEED; UHV-SEM;

D O I：

10.1143/JJAP.39.4372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface order of a heteroepitaxial diamond (001) film frown on an inclined beta-SiC(001) has been evaluated with a microelectron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heteroepitaxial diamond film is similar to 15 Angstrom.

引用

页码：4372 / 4373

页数：2

共 8 条

[1] Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements [J].