Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks

被引：21

作者：

Chung, Yoonyoung ^{[1
]}

Murmann, Boris ^{[1
]}

Selvarasah, Selvapraba ^{[2
]}

Dokmeci, Mehmet R. ^{[2
]}

Bao, Zhenan ^{[3
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA

[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; atomic layer epitaxial growth; carrier mobility; masks; nanotechnology; organic field effect transistors; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS;

D O I：

10.1063/1.3336009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L=5, 10, and 20 mu m. The field-effect mobility of the transistors was mu=1.14 (+/- 0.08) cm(2)/V s on average, and the I-MAX/I-MIN ratio was greater than 10(6).

引用

页数：3

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