Measurement of cross-sectional potential of InAlAs/InGaAs layered structures in vacuum by Kelvin probe force microscopy

被引：3

作者：

Xie, TF

Kumada, K

Kishimoto, S

Mizutani, T

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Nagoya Univ Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4A期

关键词：

Kelvin probe force microscopy; cross-sectional potential image; InAlAs/InGaAs layered structures; spatial resolution; vacuum condition;

D O I：

10.1143/JJAP.42.1751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cross-sectional contact potential images of InAlAs/InGaAs layered heterostructures have been successfully obtained by Kelvin probe force microscopy (KFM) both in air and in vacuum. The results showed that their contact potential difference in vacuum was much larger than that in air. The spatial resolution of contact potential was improved to approximately 20 nm in vacuum.

引用

收藏

页码：1751 / 1752

页数：2

相关论文

共 12 条

[1] NANOMETER-SCALE IMAGING OF POTENTIAL PROFILES IN OPTICALLY-EXCITED N-I-P-I HETEROSTRUCTURE USING KELVIN PROBE FORCE MICROSCOPY [J].

CHAVEZPIRSON, A ;

VATEL, O ;

TANIMOTO, M ;

ANDO, H ;

IWAMURA, H ;

KANBE, H .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3069-3071

[2] Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy [J].

De Wolf, P ;

Stephenson, R ;

Trenkler, T ;

Clarysse, T ;

Hantschel, T ;

Vandevorst, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :361-368

[3] High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope [J].

Kitamura, S ;

Iwatsuki, M .

APPLIED PHYSICS LETTERS, 1998, 72 (24) :3154-3156

[4] Potential profile measurement of GaAs MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe force microscopy [J].

Matsunami, K ;

Takeyama, T ;

Usunami, T ;

Kishimoto, S ;

Maezawa, K ;

Mizutani, T ;

Tomizawa, M ;

Schmid, P ;

Lipka, KM ;

Kohn, E .

SOLID-STATE ELECTRONICS, 1999, 43 (08) :1547-1553

[5] Two-dimensional potential profile measurement of GaAs HEMT's by Kelvin probe force microscopy [J].

Mizutani, T ;

Arakawa, M ;

Kishimoto, S .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :423-425

[6] Measurement of contact potential of GaAs pn junctions by Kelvin probe force microscopy [J].

Mizutani, T ;

Usunami, T ;

Kishimoto, S ;

Maezawa, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (08) :4893-4894

[7] KELVIN PROBE FORCE MICROSCOPY [J].

NONNENMACHER, M ;

OBOYLE, MP ;

WICKRAMASINGHE, HK .

APPLIED PHYSICS LETTERS, 1991, 58 (25) :2921-2923

[8] Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates [J].

Ono, S ;

Takeuchi, M ;

Takahashi, T .

APPLIED PHYSICS LETTERS, 2001, 78 (08) :1086-1088

[9] Investigation of the cleaved surface of a p-i-n laser using Kelvin probe force microscopy and two-dimensional physical simulations [J].

Robin, F ;

Jacobs, H ;

Homan, O ;

Stemmer, A ;

Bächtold, W .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2907-2909

[10] Potential shielding by the surface water layer in Kelvin probe force microscopy [J].

Sugimura, H ;

Ishida, Y ;

Hayashi, K ;

Takai, O ;

Nakagiri, N .

APPLIED PHYSICS LETTERS, 2002, 80 (08) :1459-1461