Intrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique

被引：48

作者：

Kimura, Mutsumi ^{[1
]}

Kamiya, Toshio ^{[2
]}

Nakanishi, Takashi ^{[1
]}

Nomura, Kenji ^{[3
]}

Hosono, Hideo ^{[2
,3
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

amorphous semiconductors; carrier mobility; field effect transistors; gallium compounds; II-VI semiconductors; indium compounds; semiconductor thin films; thin film transistors; wide band gap semiconductors; OXIDE SEMICONDUCTOR A-INGAZNO4-X; ELECTRONIC-STRUCTURE; TRANSPARENT; TFT;

D O I：

10.1063/1.3455072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous In-Ga-Zn-O (alpha-IGZO) is expected for thin-film transistors (TFTs) in next-generation flat-panel displays but its intrinsic properties are not understood well and different mobility models have been applied to different films. This letter reports that a universal mobility model is obtained using a field-effect technique and capacitance-voltage method. Electrical characteristics of alpha-IGZO TFTs subjected to different annealing are reproduced using the mobility model and different trap densities. The present achievement will be a necessary basis to establish device and circuit simulators for alpha-IGZO-based electronic applications. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3455072]

引用

页数：3

共 18 条

[1]

Ito M., 2009, P AM FPD, P73

[2] Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics [J].

Jeon, Kichan ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechul ;

Kim, Sunil ;

Kim, Sangwook ;

Park, Youngsoo ;

Park, Jun-Hyun ;

Lee, Sangwon ;

Kim, Dong Myong ;

Kim, Dae Hwan .

APPLIED PHYSICS LETTERS, 2008, 93 (18)

[3]

Jeong JK, 2008, SID INT SYMP DIG TEC, V39, P1

[4] Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications [J].

Jung, C. H. ;

Kim, D. J. ;

Kang, Y. K. ;

Yoon, D. H. .

THIN SOLID FILMS, 2009, 517 (14) :4078-4081

[5] Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x:: Optical analyses and first-principle calculations [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hirano, Masahiro ;

Hosono, Hideo .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09) :3098-+

[6] Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2010, 96 (12)

[7] Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (05) :860-867

[8] Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors [J].

Kim, Gun Hee ;

Ahn, Byung Du ;

Shin, Hyun Soo ;

Jeong, Woong Hee ;

Kim, Hee Jin ;

Kim, Hyun Jae .

APPLIED PHYSICS LETTERS, 2009, 94 (23)

[9] Trap densities in amorphous-InGaZnO4 thin-film transistors [J].

Kimura, Mutsumi ;

Nakanishi, Takashi ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2008, 92 (13)

[10] Device Characteristics of Amorphous Indium Gallium Zinc Oxide TFTs Sputter Deposited with Different Substrate Biases [J].

Kwon, Seyeoul ;

Park, Jungwon ;

Rack, Philip D. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (07) :H278-H280

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