Device Characteristics of Amorphous Indium Gallium Zinc Oxide TFTs Sputter Deposited with Different Substrate Biases

被引：12

作者：

Kwon, Seyeoul ^{[1
]}

Park, Jungwon ^{[1
]}

Rack, Philip D. ^{[1
]}

机构：

[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 07期

基金：

美国国家科学基金会;

关键词：

amorphous semiconductors; carrier density; gallium compounds; Hall effect; II-VI semiconductors; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; thin film transistors; wide band gap semiconductors; zinc compounds; THIN-FILM TRANSISTORS;

D O I：

10.1149/1.3129505

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (a-IGZO) active layers were fabricated using radio-frequency sputter deposition with variable dc substrate bias. High substrate bias sputtered a-IGZO TFTs produce more carriers in an a-IGZO layer and result in a negative gate threshold voltage (V(T)) shift, an increase in the field-effect mobility (mu(FE)), and an increase in the off-state current (I(off)). The subthreshold gate swing (S) is degraded with an increased substrate bias. The different TFT characteristics as a function of substrate bias can be attributed to energetic ion bombardment during a-IGZO growth.

引用

页码：H278 / H280

页数：3

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