Low temperature photo-oxidation of silicon using a xenon excimer lamp

Low temperature (250 degrees C) photo-oxidation of silicon initiated by a Xe-2* excimer lamp operating at a wavelength of 172 nm has been investigated. The induced reaction rate of 0.1 nm/min is 90 times greater than thermal oxidation at 612 degrees C and more than three times greater than that previously obtained at 350 degrees C using a low pressure mercury lamp. It was found to be strongly dependent upon oxygen pressure with the highest rates being achievable below 10 mbar. Ellipsometry, Fourier transform infrared spectroscopy. capacitance-voltage. and current-voltage measurements have been employed to characterize the oxide films and designate them as high quality. (C) 1997 American Institute of Physics.