Determination of piezoelectric and spontaneous polarization fields in CdxZn1-xO/ZnO quantum wells grown along the polar ⟨0001⟩ direction

被引：44

作者：

Benharrats, F. ^{[1
]}

Zitouni, K. ^{[1
]}

Kadri, A. ^{[1
]}

Gil, B. ^{[2
]}

机构：

[1] Univ Oran Es Senia, Dept Phys, LEMOP, Oran 31100, Algeria

[2] Univ Montpellier 2, CNRS, UMR 5650, Etud Semicond Grp, F-34095 Montpellier 5, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2010年 / 47卷 / 05期

关键词：

Semiconductor quantum wells;

D O I：

10.1016/j.spmi.2010.01.007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By iteratively solving the Schrodinger and Poisson equations, we determine theoretical values of built-in electric field induced by spontaneous and piezoelectric polarizations in wurtzite CdxZn1-xO/ZnO (x <= 0.2) quantum wells (QWs) grown along < 0001 > polar direction. By adjusting recent photoluminescence data, we find that this internal field increases with x with a linear slope A = 17.83 MV/cm. Spontaneous and piezoelectric polarization variations are also determined together with the sheet charge densities at CdxZn1-xO/ZnO heterointerface. Our results indicate similar, but much stronger polarization effects than previously reported for MgxZn1-xO/ZnO QWs. They constitute record polarization effects ever reported for wide bandgap heterostructures, including group III-nitrides. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：592 / 596

页数：5

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