298 K operation of Nb/Nb oxide-based single-electron transistors with reduced size of tunnel junctions by thermal oxidation

被引：19

作者：

Shirakashi, J

Matsumoto, K

Miura, N

Konagai, M

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

[2] Tokyo Inst Technol, Meguro Ku, Tokyo 152, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.367392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the successful operation of Nb/Nb oxide-based single-electron transistors at room temperature. At first, devices were fabricated by scanning probe microscope based anodic oxidation technique. Then, the effective area of tunnel junctions was further shrunken by thermal oxidation. Ultrasmall tunnel junctions were easily obtained utilizing additional thermal oxidation process, and single-electron charging effects were observed by means of the modulation of Coulomb blockade voltages at room temperature. (C) 1998 American Institute of Physics.

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页码：5567 / 5569

页数：3

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