Proposed configuration of integrated optical isolator employing wafer-direct bonding technique

被引：40

作者：

Yokoi, H ^{[1
]}

Mizumoto, T ^{[1
]}

机构：

[1] Tokyo Inst Technol, Fac Engn, Dept Phys Elect, Meguro Ku, Tokyo 152, Japan

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 21期

关键词：

optical isolators; wafer bonding;

D O I：

10.1049/el:19971253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel configuration of an integrated optical isolator employing a nonreciprocal phase shift is proposed. The isolator is equipped with a cladding layer of magnetic garnets by means of a wafer-direct bonding technique. Magnetic garnets with a large magnetooptic effect miniaturise the size of the nonreciprocal phase shifter to several hundreds of microns.

引用

页码：1787 / 1788

页数：2

共 9 条

[1] GIANT FARADAY-ROTATION OF CE-SUBSTITUTED YIG-FILMS EPITAXIALLY GROWN BY RF SPUTTERING [J].

GOMI, M ;

SATOH, K ;

ABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1536-L1538

[2] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J].

LASKY, JB .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :78-80

[3] BONDING BY ATOMIC REARRANGEMENT OF INP/INGAASP 1.5-MU-M WAVELENGTH LASERS ON GAAS SUBSTRATES [J].

LO, YH ;

BHAT, R ;

HWANG, DM ;

KOZA, MA ;

LEE, TP .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :1961-1963

[4] INPLANE MAGNETIZED RARE-EARTH IRON-GARNET FOR A WAVE-GUIDE OPTICAL ISOLATOR EMPLOYING NONRECIPROCAL PHASE-SHIFT [J].

MIZUMOTO, T ;

MASHIMO, S ;

IDA, T ;

NAITO, Y .

IEEE TRANSACTIONS ON MAGNETICS, 1993, 29 (06) :3417-3419

[5] SILICON-TO-SILICON DIRECT BONDING METHOD [J].

SHIMBO, M ;

FURUKAWA, K ;

FUKUDA, K ;

TANZAWA, K .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2987-2989

[6] OPTICAL WAVE-GUIDE ISOLATOR BASED ON NONRECIPROCAL RADIATION [J].

SHINTAKU, T ;

UNO, T .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) :8155-8159

[7] DIRECT BONDING OF LITAO3 SINGLE-CRYSTALS [J].

TOMITA, Y ;

SUGIMOTO, M ;

EDA, K ;

OKANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (11A) :L1542-L1544

[8] ELECTRICAL CHARACTERISTICS OF DIRECTLY-BONDED GAAS AND INP [J].

WADA, H ;

OGAWA, Y ;

KAMIJOH, T .

APPLIED PHYSICS LETTERS, 1993, 62 (07) :738-740

[9] Improved heat treatment for wafer direct bonding between semiconductors and magnetic garnets [J].

Yokoi, H ;

Mizumoto, T ;

Maru, K ;

Naito, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A) :2784-2787

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