347 nm ultraviolet electroluminescence from MgxZn1-xO-based light emitting devices

被引：25

作者：

Chen, Peiliang

Ma, Xiangyang

Li, Dongsheng

Zhang, Yuanyuan

Yang, Deren ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 25期

关键词：

D O I：

10.1063/1.2751106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

347 nm ultraviolet (UV) electroluminescence (EL) originated from the near-band-edge emission of MgxZn1-xO was realized on a MgxZn1-xO-based metal-insulator (SiO2)-semiconductor (MIS) structure on a silicon substrate. Compared with the EL performance of the MgxZn1-xO/n(+)-Si heterojunction, the MgxZn1-xO-based MIS structure exhibited much stronger and purer UV emission while much weaker visible emissions. This is ascribed to the carrier accumulation beneath the MgxZn1-xO/SiO2 interface as the MIS structure is under forward bias, which significantly increases the radiative interband recombination rate and therefore the UV emission from MgxZn1-xO.(c) 2007 American Institute of Physics.

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页数：3

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