Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions

被引：59

作者：

Koga, R

Penzin, SH

Crawford, KB

Crain, WR

Moss, SC

Pinkerton, SD

LaLumondiere, SD

Maher, MC

机构：

[1] Aerospace Corp, Los Angeles, CA 90009 USA

[2] Natl Semicond Corp, S Portland, ME 04106 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 06期

关键词：

D O I：

10.1109/23.659055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single event upset (SEU) sensitivity of certain types of linear microcircuits is strongly affected by bias conditions. For these devices, a model of upset mechanism and a method for SEU control have been suggested.

引用

页码：2325 / 2332

页数：8

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