Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts

被引：6

作者：

Chua, CL ^{[1
]}

Thornton, RL ^{[1
]}

Treat, DW ^{[1
]}

Kneissl, M ^{[1
]}

Dunnrowicz, C ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.120947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present top-emitting all-epitaxial planar laterally oxidized vertical-cavity surface-emitting lasers employing transparent indium-tin-oxide electrodes. The transparent contacts facilitate device fabrication and offer significantly denser device packing than similar planar laterally oxidized structures using metal contacts. The InAlGaAs-based devices operate at a wavelength of 817 nm with a minimum threshold current of 175 mu A. (C) 1998 American Institute of Physics.

引用

收藏

页码：1001 / 1003

页数：3

相关论文

共 10 条

[1] Indium tin oxide transparent electrodes for broad-area top-emitting vertical-cavity lasers fabricated using a single lithography step [J].

Chua, CL ;

Thornton, RL ;

Treat, DW ;

Yang, VK ;

Dunnrowicz, CC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (05) :551-553

[2] Planar laterally oxidized vertical-cavity lasers for low-threshold high-density top-surface-emitting arrays [J].

Chua, CL ;

Thornton, RL ;

Treat, DW .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (08) :1060-1062

[3] A novel 4x8 single-mode independently addressable oxide-isolated VCSEL array [J].

Giaretta, G ;

Li, MY ;

Li, GS ;

Yuen, WP ;

ChangHasnain, CJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (09) :1196-1198

[4] Multiwavelength, densely-packed 2x2 vertical-cavity surface-emitting laser array fabricated using selective oxidation [J].

Huffaker, DL ;

Deppe, DG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (07) :858-860

[5] NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS [J].

HUFFAKER, DL ;

DEPPE, DG ;

KUMAR, K ;

ROGERS, TJ .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :97-99

[6] AlInGaAs/AlGaAs strained-layer 850 nm vertical-cavity lasers with very low thresholds [J].

Ko, J ;

Hegblom, ER ;

Akulova, Y ;

Margalit, NM ;

Coldren, LA .

ELECTRONICS LETTERS, 1997, 33 (18) :1550-1551

[7] ROOM-TEMPERATURE CONTINUOUS WAVE LASING CHARACTERISTICS OF A GAAS VERTICAL CAVITY SURFACE-EMITTING LASER [J].

KOYAMA, F ;

KINOSHITA, S ;

IGA, K .

APPLIED PHYSICS LETTERS, 1989, 55 (03) :221-222

[8] Mode-partition noise in vertical-cavity surface-emitting lasers [J].

Law, JY ;

Agrawal, GP .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (04) :437-439

[9] SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH 50-PERCENT POWER CONVERSION EFFICIENCY [J].

LEAR, KL ;

CHOQUETTE, KD ;

SCHNEIDER, RP ;

KILCOYNE, SP ;

GEIB, KM .

ELECTRONICS LETTERS, 1995, 31 (03) :208-209

[10] ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS OXIDE-GAAS DISTRIBUTED BRAGG REFLECTORS [J].

MACDOUGAL, MH ;

DAPKUS, PD ;

PUDIKOV, V ;

ZHAO, HM ;

YANG, GM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (03) :229-231