Nanoscale chemical etching of near-stoichiometric lithium tantalate

被引:30
作者
Liu, XY [1 ]
Terabe, K [1 ]
Nakamura, M [1 ]
Takekawa, S [1 ]
Kitamura, K [1 ]
机构
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1063/1.1870115
中图分类号
O59 [应用物理学];
学科分类号
摘要
The chemical etching properties of ferroelectric LiTaO3 crystal in near-stoichiometric compositions were quantitatively investigated with various ratios of HF and HNO3 acid mixtures by scanning force microscopy in the nanoscale range. Along with congruent LiTaO3 crystal, the -Z surfaces of near-stoichiometric LiTaO3 crystal were etched preferentially with pure HF acid and mixtures of HF and HNO3 acids. The etching rates on the -Z surface of near-stoichiometric LiTaO3 crystal were slower than that of congruent LiTaO3 crystal. The roughness (peak to peak) of etched surfaces were about 2 nm after being etched in all ratios of HF and HNO3 acids to a 70-nm etch depth. The temperature dependence of the etch rate followed the Arrhenius law. By taking advantage of the chemical preferential etching properties, precision surface structures could be fabricated on near-stoichiometric LiTaO3 crystal. (C) 2005 American Institute of Physics.
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相关论文
共 10 条
[1]   Microstructuring of lithium niobate using differential etch-rate between inverted and non-inverted ferroelectric domains [J].
Barry, IE ;
Ross, GW ;
Smith, PGR ;
Eason, RW ;
Cook, G .
MATERIALS LETTERS, 1998, 37 (4-5) :246-254
[2]   Comparison of electro-optic effect between stoichiometric and congruent LiNbO3 [J].
Fujiwara, T ;
Takahashi, M ;
Ohama, M ;
Ikushima, AJ ;
Furukawa, Y ;
Kitamura, K .
ELECTRONICS LETTERS, 1999, 35 (06) :499-501
[3]   Etching study of ferroelectric microdomains in LiNbO3 and MgO:LiNbO3 [J].
Holstein, WL .
JOURNAL OF CRYSTAL GROWTH, 1997, 171 (3-4) :477-484
[4]   Crystal growth and low coercive field 180° domain switching characteristics of stoichiometric LiTaO3 [J].
Kitamura, K ;
Furukawa, Y ;
Niwa, K ;
Gopalan, V ;
Mitchell, TE .
APPLIED PHYSICS LETTERS, 1998, 73 (21) :3073-3075
[5]   STOICHIOMETRIC LINBO3 SINGLE-CRYSTAL GROWTH BY DOUBLE CRUCIBLE CZOCHRALSKI METHOD USING AUTOMATIC POWDER SUPPLY-SYSTEM [J].
KITAMURA, K ;
YAMAMOTO, JK ;
IYI, N ;
KIMURA, S ;
HAYASHI, T .
JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) :327-332
[6]   Surface precipitates on single crystal LiNbO3 after dry-etching by CHF3 plasma [J].
Shima, K ;
Mitsugi, N ;
Nagata, H .
JOURNAL OF MATERIALS RESEARCH, 1998, 13 (03) :527-529
[7]   Differential etch rates in z-cut LiNbO3 for variable HF/HNO3 concentrations [J].
Sones, CL ;
Mailis, S ;
Brocklesby, WS ;
Eason, RW ;
Owen, JR .
JOURNAL OF MATERIALS CHEMISTRY, 2002, 12 (02) :295-298
[8]   Domain and surface engineering of ferroelectric crystal LiNbO3 for novel devices [J].
Terabe, K ;
Liu, X ;
Nakamura, M ;
Takekawa, S ;
Kitamura, K .
MATERIALS TECHNOLOGY, 2004, 19 (03) :162-167
[9]   Microscale to nanoscale ferroelectric domain and surface engineering of a near-stoichiometric LiNbO3 crystal [J].
Terabe, K ;
Nakamura, M ;
Takekawa, S ;
Kitamura, K ;
Higuchi, S ;
Gotoh, Y ;
Cho, Y .
APPLIED PHYSICS LETTERS, 2003, 82 (03) :433-435
[10]  
Xue D, 2002, FERROELECTRICS LETT, V29, P89, DOI 10.1080/07315170290203253