Anomalous current transients in organic field-effect transistors

被引：24

作者：

Sharma, A. ^{[1
]}

Mathijssen, S. G. J. ^{[1
,2
]}

Cramer, T. ^{[3
]}

Kemerink, M. ^{[1
]}

de Leeuw, D. M. ^{[2
]}

Bobbert, P. A. ^{[1
]}

机构：

[1] Tech Univ Eindhoven, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[3] Univ Bologna, Dept Chem, I-40126 Bologna, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

关键词：

THIN-FILM TRANSISTORS; SHIFTS;

D O I：

10.1063/1.3339879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here we study the origin of the gate bias-stress effect in organic p-type transistors. Based on water-mediated exchange between holes in the semiconductor and protons in the gate dielectric, we predict anomalous current transients for a non-constant gate bias, while ensuring accumulation. When applying a strongly negative gate bias followed by a less negative bias a back-transfer of protons to holes and an increase of the current is expected. We verify this counterintuitive behavior experimentally and can quantitatively model the transients with the same parameters as used to describe the threshold voltage shift. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339879]

引用

页数：3

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