InAs/GaAs quantum dot intermixing induced by proton implantation

被引：38

作者：

Ji, YL ^{[1
]}

Lu, W ^{[1
]}

Chen, GB ^{[1
]}

Chen, XS ^{[1
]}

Wang, Q ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.1530717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the intermixing effect of multilayer self-assembled InAs/GaAs quantum dots on photoluminescence (PL) spectra. Proton implantation combined with rapid thermal annealing is used to induce intermixing at the interface of InAs and GaAs. Intermixing results in a change of both the optical transition energy and the linewidth of the PL emission peaks. A blueshift up to 94.3 meV is obtained in the PL emission peaks. Our results show that proton implantation is an efficient method to tune the electronic states in self-assembled InAs/GaAs quantum dots. (C) 2003 American Institute of Physics.

引用

页码：1208 / 1211

页数：4

共 30 条

[21] Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots [J].

Perret, N ;

Morris, D ;

Franchomme-Fossé, L ;

Côté, R ;

Fafard, S ;

Aimez, V ;

Beauvais, J .

PHYSICAL REVIEW B, 2000, 62 (08) :5092-5099

[22] Accurate validation of experimental results of interdiffused InGaAs/GaAs strained quantum wells by suitable numerical methods [J].

Prol, M ;

Moredo-Araújo, A ;

Fraile-Peláez, FJ ;

Gómez-Alcalá, R .

SUPERLATTICES AND MICROSTRUCTURES, 2001, 30 (02) :61-67

[23] PROTON IMPLANTATION INTERMIXING OF GAAS/ALGAAS QUANTUM-WELLS [J].

REDINBO, GF ;

CRAIGHEAD, HG ;

HONG, JMH .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3099-3102

[24] THE EFFECT OF STRAIN ON THE INTERDIFFUSION IN INGAAS/GAAS QUANTUM-WELLS [J].

RYU, SW ;

KIM, I ;

CHOE, BD ;

JEONG, WG .

APPLIED PHYSICS LETTERS, 1995, 67 (10) :1417-1419

[25] Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers [J].

Sellin, RL ;

Ribbat, C ;

Grundmann, M ;

Ledentsov, NN ;

Bimberg, D .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1207-1209

[26] Vertically aligned and electronically coupled growth induced InAs islands in GaAs [J].

Solomon, GS ;

Trezza, JA ;

Marshall, AF ;

Harris, JS .

PHYSICAL REVIEW LETTERS, 1996, 76 (06) :952-955

[27] Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots [J].

Surkova, T ;

Patanè, A ;

Eaves, L ;

Main, PC ;

Henini, M ;

Polimeni, A ;

Knights, AP ;

Jeynes, C .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6044-6047

[28] Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector [J].

Tang, SF ;

Lin, SY ;

Lee, SC .

APPLIED PHYSICS LETTERS, 2001, 78 (17) :2428-2430

[29] Size and shape engineering of vertically stacked self-assembled quantum dots [J].

Wasilewski, ZR ;

Fafard, S ;

McCaffrey, JP .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :1131-1135

[30] Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique [J].

Wellmann, PJ ;

Schoenfeld, WV ;

Garcia, JM ;

Petroff, PM .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (09) :1030-1033

← 1 2 3 →