550GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs

被引：41

作者：

Kordos, P ^{[1
]}

Forster, A ^{[1
]}

Marso, M ^{[1
]}

Ruders, F ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 01期

关键词：

D O I：

10.1049/el:19980039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014fF/mu m(2), determined from microwave measurements. The device bandwidth is RC limited.

引用

页码：119 / 120

页数：2

共 9 条

[1] ULTRAFAST NANOSCALE METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON BULK AND LOW-TEMPERATURE GROWN GAAS [J].

CHOU, SY ;

LIU, Y ;

KHALIL, W ;

HSIANG, TY ;

ALEXANDROU, S .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :819-821

[2] HIGH-SPEED PHOTODETECTOR APPLICATIONS OF GAAS AND INXGA1-XAS/GAAS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].

GUPTA, S ;

WHITAKER, JF ;

WILLIAMSON, SL ;

MOUROU, GA ;

LESTER, L ;

HWANG, KC ;

HO, P ;

MAZUROWSKI, J ;

BALLINGALL, JM .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (12) :1449-1455

[3] Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs [J].

Kordos, P ;

Marso, M ;

Forster, A ;

Darmo, J ;

Betko, J ;

Nimtz, G .

APPLIED PHYSICS LETTERS, 1997, 71 (08) :1118-1120

[4]

LIM YC, 1968, IEEE T ELECTRON DEV, VED15, P173

[5] HIGH IV PRODUCT LT-GAAS MISFET STRUCTURE [J].

LIPKA, K ;

SPLINGART, B ;

KOHN, E .

ELECTRONICS LETTERS, 1993, 29 (13) :1170-1172

[6] MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES [J].

LOOK, DC .

THIN SOLID FILMS, 1993, 231 (1-2) :61-73

[7] Fundamental issues of device-relevant low temperature GaAs and related materials properties [J].

Missous, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :304-310

[8] Tailoring of trap-related carrier dynamics in low-temperature-grown GaAs [J].

Smith, PWE ;

Benjamin, SD ;

Loka, HS .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1156-1158

[9] OPTOELECTRONIC APPLICATIONS OF LTMBE III-V MATERIALS [J].

WHITAKER, JF .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01) :61-67

← 1 →