Modeling and simulation of chemically amplified electron beam, x-ray, and EUV resist processes

被引：133

作者：

Kozawa, T ^{[1
]}

Saeki, A ^{[1
]}

Tagawa, S ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 06期

关键词：

D O I：

10.1116/1.1823435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the shrinkage of feature sizes, ever precise accuracy has been required for process simulators because of the importance of nanoscale resist topography such as line edge roughness. Formation processes of latent images in chemically amplified electron beam (EB), x-ray, and EUV resists are, different from both chemically amplified photoresists used in optical lithography and conventional. nonchemically amplified EB resists. A new simulation scheme precisely based on reaction mechanisms is necessary to reproduce resist patterns for the postoptical lithographies. We proposed a method to simulate electron dynamics in chemically amplified resists and to calculate the acid distribution around an ionization point with a typical parameter set. (C) 2004 American Vacuum Society.

引用

页码：3489 / 3492

页数：4

共 29 条

[21] Subpicosecond pulse radiolysis study of geminate ion recombination in liquid benzene [J].

Okamoto, K ;

Saeki, A ;

Kozawa, T ;

Yoshida, Y ;

Tagawa, S .

CHEMISTRY LETTERS, 2003, 32 (09) :834-835

[22] PHOTOINITATION OF CATIONIC POLYMERIZATION .2. LASER FLASH-PHOTOLYSIS OF DIPHENYLIODONIUM SALTS [J].

PAPPAS, SP ;

PAPPAS, BC ;

GATECHAIR, LR ;

SCHNABEL, W .

JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1984, 22 (01) :69-76

[23] Study of resolution limits due to intrinsic bias in chemically amplified photoresists [J].

Postnikov, SV ;

Stewart, MD ;

Tran, HV ;

Nierode, MA ;

Medeiros, DR ;

Cao, T ;

Byers, J ;

Webber, SE ;

Wilson, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :3335-3338

[24] Study on radiation-induced reaction in microscopic region for basic understanding of electron beam patterning in lithographic process (II) - Relation between resist space resolution and space distribution of ionic species [J].

Saeki, A ;

Kozawa, T ;

Yoshida, Y ;

Tagawa, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6B) :4213-4216

[25] EXPERIMENTAL AND THEORETICAL-STUDY OF ENERGY DISSIPATION PROFILES OF KEV ELECTRONS IN POLYMETHYLMETHACRYLATE [J].

SHIMIZU, R ;

IKUTA, T ;

EVERHART, TE ;

DEVORE, WJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1581-1584

[26] Radiation and photochemistry of onium salt acid generators in chemically amplified resists [J].

Tagawa, S ;

Nagahara, S ;

Iwamoto, T ;

Wakita, M ;

Kozawa, T .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :204-213

[27]

Tsuji S., 2000, Journal of Photopolymer Science and Technology, V13, P733, DOI 10.2494/photopolymer.13.733

[28] Polymer screening method for chemically amplified electron beam and X-ray resists [J].

Yamamoto, H ;

Nakano, A ;

Okamoto, K ;

Kozawa, T ;

Tagawa, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (6B) :3971-3973

[29] Proton dynamics in chemically amplified electron beam resists [J].

Yamamoto, H ;

Kozawa, T ;

Nakano, A ;

Okamoto, K ;

Yamamoto, Y ;

Ando, T ;

Sato, M ;

Komano, H ;

Tagawa, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7A) :L848-L850

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