Preparation of WNx films and their diffusion barrier properties in Cu/Si contact systems

被引:38
作者
Takeyama, M
Noya, A
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 4A期
关键词
Cu metallization; diffusion barrier; W-N alloy; W2N; preferential orientation; metal-semiconductor interface; CU; SILICON; SI; TA; TANTALUM; ALUMINUM; COPPER; ALLOYS;
D O I
10.1143/JJAP.36.2261
中图分类号
O59 [应用物理学];
学科分类号
摘要
We prepared thin WNx films with various compositions by reactive sputtering and examined their characterizations and barrier properties applied to Cu/WNx/Si contact systems. The results indicate that the W65N35 barrier, which is in the W2N phase with preferred orientation in the (111) plane, shows excellent barrier properties for Cu metallization. The obtained Cu/W2N/Si system is fairly stable without diffusion and/or reaction even after annealing at 800 degrees C for Ih. This system stability is speculated to originate from the thermal stability of the W2N film itself, which is chemically inert and scarcely changes in structure due to annealing.
引用
收藏
页码:2261 / 2266
页数:6
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