Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

被引：6

作者：

Cho, KH

Choi, BH

Son, SH

Hwang, SW

Ahn, D

Park, BG

Naser, B

Lin, JF

Bird, JP

机构：

[1] Korea Univ, Dept Elect & Comp Engn, Seoul 136701, South Korea

[2] Univ Seoul, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea

[3] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

[4] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[5] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[6] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 04期

关键词：

D O I：

10.1063/1.1854738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI(D)/dV(DS) spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface. (C) 2005 American Institute of Physics.

引用

页码：043101 / 1

页数：3

共 11 条

[1] Double-dot-like charge transport through a small size silicon single electron transistor [J].