Laser microwave photoconductance studies of ultraviolet-irradiated silicon wafers - Effect of metallic contamination

被引：2

作者：

Lee, WP ^{[1
]}

Khong, YL ^{[1
]}

机构：

[1] ShinEtsu Handotai M Sdn Bhd, Dept Res & Dev, Kuala Lumpur, Malaysia

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 01期

关键词：

D O I：

10.1149/1.1838254

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The minority carrier recombination lifetimes of ultraviolet-irradiated silicon wafers were studied using the laser-microwave photoconductance method. These wafers were intentionally surface contaminated with metals. With ultraviolet irradiation, the effective minority carrier recombination lifetimes of these samples are enhanced. The Lifetime enhancement occurs at a faster rate for contaminated wafers. These lifetime enhancements are not permanent; with cessation of the ultraviolet radiation, the preirradiation levels can be restored.

引用

页码：329 / 332

页数：4

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