The photoluminescence of Pt-implanted silicon

被引：3

作者：

Alves, E ^{[1
]}

Bollmann, J

Deicher, M

Carmo, MC

Henry, MO

Knopf, MHA

Leitao, JP

Magerle, R

McDonagh, CJ

机构：

[1] Univ Lisbon, Ctr Fis Nucl, P-1699 Lisbon, Portugal

[2] Humboldt Univ, D-10115 Berlin, Germany

[3] Univ Konstanz, Fak Phys, D-78434 Constance, Germany

[4] Univ Aveiro, Dept Fis, P-3810 Aveiro, Portugal

[5] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

silicon; photoluminescence; Si : Pt; stress;

D O I：

10.4028/www.scientific.net/MSF.258-263.473

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence measurements on Pt-implanted n-type FZ silicon samples show that three vibronic bands are produced, with principal zero-phonon lines at similar to 1026, 884 and 777 meV. The thermal binding energies are 34.6, 5.2 and 11.2 meV, respectively. Uniaxial stress data show that all centres are axial. None of the spectra can be identified with known transitions on the Pt donor or acceptor centres, and they do not correspond to any previously published PL or absorption spectra. Evidence for the involvement of iron and lithium in some of the centres is presented.

引用

页码：473 / 478

页数：6

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