Negative differential resistivity and positive temperature coefficient of resistivity effect in the diffusion-limited current of ferroelectric thin-film capacitors

被引:40
作者
Dawber, M [1 ]
Scott, JF [1 ]
机构
[1] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England
关键词
D O I
10.1088/0953-8984/16/49/L04
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present a model for the leakage current in ferroelectric thin-film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential resistivity at low voltages, and the observation of a positive temperature coefficient of resistivity (PTCR) effect in certain samples in the high-voltage regime. The leakage current is modelled by considering a diffusion-limited current process, which in the high-voltage regime recovers the diffusion-limited Schottky relationship of Simmons already shown to be applicable in these systems.
引用
收藏
页码:L515 / L521
页数:7
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