Two-photon photoemission as a probe of unoccupied and occupied surface states of InP(100)

被引：16

作者：

Töben, L ^{[1
]}

Hannappel, T ^{[1
]}

Eichberger, R ^{[1
]}

Möller, K ^{[1
]}

Gundlach, L ^{[1
]}

Ernstorfer, R ^{[1
]}

Willig, F ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

electronic structure; surface reconstruction; surface state; two-photon photoemission; metalorganic vapor phase epitaxy; indium phosphide;

D O I：

10.1016/S0022-0248(02)01884-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two-photon photoemission was employed to study the electronic structure of the ordered (2, 4)-reconstructed In-rich surface of InP(100). Dangling bond surface states, two unoccupied and one occupied, were identified near the Gamma-point of the surface Brillouin zone in good agreement with the theoretical predictions of Schmidt et al. (PhDs. Rev. B 61 (2000) R16335), In addition, one photon photoemission from Occupied electronic states in the band gap was observed that is tentatively ascribed to small In-droplets or Clusters. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：206 / 210

页数：5

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