Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy

被引：691

作者：

Hao, Yufeng ^{[1
]}

Wang, Yingying ^{[2
]}

Wang, Lei ^{[1
]}

Ni, Zhenhua ^{[2
]}

Wang, Ziqian ^{[1
]}

Wang, Rui ^{[1
]}

Koo, Chee Keong ^{[1
]}

Shen, Zexiang ^{[2
]}

Thong, John T. L. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, CICFAR, Singapore 117576, Singapore

[2] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Math & Phys Sci, Singapore 637371, Singapore

来源：

SMALL | 2010年 / 6卷 / 02期

关键词：

electronic structure; graphene; Raman spectroscopy; stacking; SCATTERING; GRAPHITE; DISORDER; FILMS;

D O I：

10.1002/smll.200901173

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Layer number and stacking order of few-layer graphene (FLG) are of particular interest since they directly determine the performance of graphenebased electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of ABstacked FLG from single- to five-layer graphene; a few key spectral characteristics are also identified for FLG with misoriented stacking electronic structure graphene, Raman spectroscopy, stacking. © 2010 Wlley-VCH Verlag GmbH & Co. KGaA.

引用

页码：195 / 200

页数：6

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