Reduced reverse narrow channel effect in thin SOI nMOSFETs

被引：7

作者：

Chang, CY ^{[1
]}

Chang, SJ

Chao, TS

Wu, SD

Huang, TY

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 09期

关键词：

reverse narrow channel effect (RNCE); silicon-on-insulator (SOI);

D O I：

10.1109/55.863111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOGOS isolation have been investigated. The reverse narrow channel effect (RNCE) in SOI devices is found to be dependent on the thickness of the active silicon film. A thinner silicon film is found to depict less threshold voltage fall-off. These results can be explained by a reduced oxide/silicon interface area in the transistor width direction, thus the boron segregation due to silicon interstitials with high recombination rate is reduced.

引用

页码：460 / 462

页数：3

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