Low threshold 3 μm interband cascade "W" laser

被引：18

作者：

Felix, CL

Bewley, WW

Aifer, EH

Vurgaftman, I

Meyer, JR

Lin, CH

Zhang, D

Murry, SJ

Yang, RQ

Pei, SS

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 02期

基金：

美国国家航空航天局;

关键词：

interband cascade laser; InAs/GaInSb; mid-infrared; slope efficiency; threshold; type-II semiconductor;

D O I：

10.1007/s11664-998-0192-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated the operation at lambda approximate to 3.0 mu m of a 22-stage interband cascade laser with a "W" active region for enhanced gain. The threshold current density for a ridge structure is 170 A/cm(2) at 80K, and it remains lower than the best reported intersubband quantum cascade laser results at all T up to the maximum lasing temperature of 225K. At T = 100K, peak output powers up to 532 mW are observed, and the slope of 342 mW/A per facet for high injection levels corresponds to a differential quantum efficiency of 1.6 photons emitted for every injected electron.

引用

页码：77 / 80

页数：4

共 16 条

[1] DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 3-MU-M WITH A METASTABLE GAINASSB ACTIVE LAYER AND ALGAASSB CLADDING LAYERS
CHOI, HK
EGLASH, SJ
TURNER, GW
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (19) : 2474 - 2476
[2] VERTICAL TRANSITION QUANTUM CASCADE LASER WITH BRAGG CONFINED EXCITED-STATE
FAIST, J
CAPASSO, F
SIRTORI, C
SIVCO, DL
HUTCHINSON, AL
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (05) : 538 - 540
[3] QUANTUM CASCADE LASER
FAIST, J
CAPASSO, F
SIVCO, DL
SIRTORI, C
HUTCHINSON, AL
CHO, AY
[J]. SCIENCE, 1994, 264 (5158) : 553 - 556
[4] Faist J., COMMUNICATION
[5] Interband cascade laser emitting >1 photon per injected electron
Felix, CL
Bewley, WW
Vurgaftman, I
Meyer, JR
Zhang, D
Lin, CH
Yang, RQ
Pei, SS
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (11) : 1433 - 1435
[6] Recent advances in Sb-based midwave-infrared lasers
Hasenberg, TC
Miles, RH
Kost, AR
West, L
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (08) : 1403 - 1406
[7] MBE grown mid-infrared type-II quantum-well lasers
Lin, CH
Murry, SJ
Zhang, D
Chang, PC
Zhou, YC
Pei, SS
Malin, JI
Felix, CL
Meyer, JR
Hoffman, CA
Pinto, JF
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 955 - 959
[8] Type-II interband quantum cascade laser at 3.8 mu m
Lin, CH
Yang, RQ
Zhang, D
Murry, SJ
Pei, SS
Allerman, AA
Kutz, SR
[J]. ELECTRONICS LETTERS, 1997, 33 (07) : 598 - 599
[9] Type-II and type-I interband cascade lasers
Meyer, JR
Vurgaftman, I
Yang, RQ
RamMohan, LR
[J]. ELECTRONICS LETTERS, 1996, 32 (01) : 45 - 46
[10] TYPE-II QUANTUM-WELL LASERS FOR THE MIDWAVELENGTH INFRARED
MEYER, JR
HOFFMAN, CA
BARTOLI, FJ
RAMMOHAN, LR
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (06) : 757 - 759

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