Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal-Oxide-Semiconductor Field-Effect-Transistor Approach

被引：7

作者：

Yamamoto, Shuu'ichirou ^{[1
,4
]}

Shuto, Yusuke ^{[2
,4
]}

Sugahara, Satoshi ^{[2
,3
,4
]}

机构：

[1] Tokyo Inst Technol, Dept Informat Proc, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268502, Japan

[3] Tokyo Inst Technol, Dept Elect & Appl Phys, Yokohama, Kanagawa 2268502, Japan

[4] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

基金：

日本科学技术振兴机构;

关键词：

LOW-POWER; CIRCUIT; SRAM;

D O I：

10.1143/JJAP.49.040209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we present a variable-transconductance (g(m)) metal-oxide-semiconductor field-effect-transistor (VGm-MOSFET) architecture using a nonpolar resistive switching device (RSD) for nonvolatile bistable circuit applications. The architecture can be achieved by connecting an RSD to the source terminal of an ordinary MOSFET. The current drive capability of the VGm-MOSFET can be modified by resistance states of the connected RSD, which is a very useful function for nonvolatile bistable circuits, such as nonvolatile static random access memory (NV-SRAM) and nonvolatile flip-flop (NV-FF). NV-SRAM can be easily configured by connecting two additional VGm-MOSFETs to the storage nodes of a standard SRAM cell. Using our developed SPICE macromodel for nonpolar RSDs, successful circuit operations of the proposed NV-SRAM cell were confirmed. (C) 2010 The Japan Society of Applied Physics

引用

页码：0402091 / 0402093

页数：3

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