Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers

被引：25

作者：

Chow, W. W.

Kneissl, M.

Northrup, J. E.

Johnson, N. M.

机构：

[1] Sandia Natl Labs, Semicond Mat & Device Sci Dept, Albuquerque, NM 87185 USA

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[3] Palo Alto Res Ctr, Elect Mat & Devices Lab, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 10期

关键词：

D O I：

10.1063/1.2679969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In an AlGaN quantum-well laser, the presence of Al affects the optical properties of the gain-generating active region partly because of the distinct difference in the band structure between AlN and GaN or InN. The intricate connection between band structure and internal-electric-field effects leads to a noticeably stronger influence of barrier composition on optical gain, lasing polarization, and threshold current than in conventional near-infrared III-V lasers. (c) 2007 American Institute of Physics.

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页数：3

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