Switching of Cu/MoOx/TiN CBRAM at MoOx/TiN interface

被引：14

作者：

Arita, Masashi ^{[1
]}

Ohno, Yuuki ^{[1
]}

Takahashi, Yasuo ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Kita 14,Nishi 9, Sapporo 0600814, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 02期

关键词：

CBRAM; conductive filaments; copper; MoOx; ReRAM; transmission electron microscopy; TRANSMISSION ELECTRON-MICROSCOPY; REAL-TIME OBSERVATION; CONDUCTIVE FILAMENTS; DYNAMIC GROWTH/DISSOLUTION; RESISTIVE MEMORIES; SOLID-ELECTROLYTE; RERAM; CU;

D O I：

10.1002/pssa.201532414

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

For dynamical observation of CBRAM microstructure, in situ transmission electron microscopy (in situ TEM) was performed on Cu/MoOx/TiN during the resistive switching. It was confirmed that the local area near the MoOx/TiN interface contributes to resistive switching. The Cu deposit at the bottom of the MoOx layer swelled into the oxidized thin layer of the TiN bottom electrode, and a thin filament of 3-5nm diameter was formed in the Set process. The reversal change was seen in the Reset process. On increasing the switching power, a microstructural change in the MoOx layer was also seen, and the CBRAM film was finally destroyed.

引用

收藏

页码：306 / 310

页数：5

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