Highly textured (100) RuO2/(001) Ru multilayers prepared by sputtering

被引：9

作者：

Abe, Y ^{[1
]}

Kawamura, M ^{[1
]}

Sasaki, K ^{[1
]}

机构：

[1] Kitami Inst Technol, Fac Engn, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 11B期

关键词：

Ru; RuO2; highly oriented film; sputtering; X-ray diffraction; rocking curve;

D O I：

10.1143/JJAP.41.6857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(001)-oriented Ru films were prepared on-SiO2/Si substrates by rf magnetron sputtering using a mixed gas of Ar and O-2 with an appropriate O-2 flow ratio which was lower than that required for RuO2 formation. Oxygen atoms are believed to play a role as a surfactant and to enhance single oriented growth of Ru films. Next, highly (100)-oriented RuO2 films were deposited on the Rut films by reactive sputtering. The (100)-oriented growth of the RuO2 films is thought to originate from local epitaxial growth on (001)-oriented Ru grains because the mismatch between superlattices of Ru (001) and RuO2 (100) planes is small. Full-widths at half maximum (FWHMs) of 1.8degrees and 2.1degrees were obtained for the X-ray diffraction (XRD) rocking curves of Ru (002) and RuO2 (200) peaks, respectively. The highly textured RuO2/Ru electrodes are expected to be useful for dynamic random access memory (DRAM) and ferroelectric random access memory (FeRAM) technologies.

引用

页码：6857 / 6861

页数：5

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