Increase in midwave infrared light emitting diode light output due to substrate thinning and texturing

被引：22

作者：

Das, N. C. ^{[1
]}

机构：

[1] USA, Res Lab, Microphoton Branch, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期

关键词：

D O I：

10.1063/1.2430484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Midwave infrared (MWIR) light sources with high optical power are required for many applications. The authors report here the MWIR (3.8 mu m peak) light emission from an interband cascade light emitting diode (LED) structure with 18 cascaded active/injection regions grown on GaSb substrate. The light emission is observed from the substrate side of the device. An increase of six times of light output power is observed due to substrate thinning and another 50% increase is observed due to texturing the emission surface. The authors observed 400 mu W emission power for room temperature operation with 15 mA LED injection current. Experiments were carried out with different grating patterns and etch depths. The device with a 2 mu m square grating and a 1 mu m etch depth has the highest optical emission power.

引用

页数：3

共 14 条

[1] Recent advances in mid-infrared (3-6 μm) emitters [J].

Biefeld, RM ;

Allerman, AA ;

Kurtz, SR .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3) :1-8

[2] Infrared (3.8 μm) interband cascade light-emitting diode array with record high efficiency -: art. no. 041105 [J].

Das, NC ;

Olver, K ;

Towner, F ;

Simonis, G ;

Shen, H .

APPLIED PHYSICS LETTERS, 2005, 87 (04)

[3] High emissive power MWIR LED array [J].

Das, NC ;

Olver, K ;

Towner, F .

SOLID-STATE ELECTRONICS, 2005, 49 (08) :1422-1427

[4] Design and fabrication of 2xD light emitting device arrays for IR scene projection [J].

Das, NC ;

Simonis, G ;

Bradshaw, J ;

Goldberg, A ;

Gupta, N .

TECHNOLOGIES FOR SYNTHETIC ENVIRONMENTS: HARDWARE IN THE LOOP TESTING IX, 2004, 5408 :136-143

[5] Demonstration of cascade process in InAs/GaInSb/AlSb mid-infrared light emitting devices [J].

Dupont, E ;

McCaffrey, JP ;

Liu, HC ;

Buchanan, M ;

Yang, RQ ;

Lin, CH ;

Zhang, D ;

Pei, SS .

APPLIED PHYSICS LETTERS, 1998, 72 (12) :1495-1497

[6] Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared [J].

Green, AM ;

Gevaux, DG ;

Roberts, C ;

Phillips, CC .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4) :531-535

[7] Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes [J].

Kane, MJ ;

Braithwaite, G ;

Emeny, MT ;

Lee, D ;

Martin, T ;

Wright, DR .

APPLIED PHYSICS LETTERS, 2000, 76 (08) :943-945

[8] High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency [J].

Krames, MR ;

Ochiai-Holcomb, M ;

Höfler, GE ;

Carter-Coman, C ;

Chen, EI ;

Tan, IH ;

Grillot, P ;

Gardner, NF ;

Chui, HC ;

Huang, JW ;

Stockman, SA ;

Kish, FA ;

Craford, MG ;

Tan, TS ;

Kocot, CP ;

Hueschen, M ;

Posselt, J ;

Loh, B ;

Sasser, G ;

Collins, D .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2365-2367

[9] ULTRAHIGH SPONTANEOUS EMISSION QUANTUM EFFICIENCY, 99.7-PERCENT INTERNALLY AND 72-PERCENT EXTERNALLY, FROM ALGAAS/GAAS/ALGAAS DOUBLE HETEROSTRUCTURES [J].

SCHNITZER, I ;

YABLONOVITCH, E ;

CANEAU, C ;

GMITTER, TJ .

APPLIED PHYSICS LETTERS, 1993, 62 (02) :131-133

[10] Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes [J].

Windisch, R ;

Heremans, P ;

Knobloch, A ;

Kiesel, P ;

Döhler, GH ;

Dutta, B ;

Borghs, G .

APPLIED PHYSICS LETTERS, 1999, 74 (16) :2256-2258

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