Optically pumped, monolithic, all-epitaxial 1.56μm vertical cavity surface emitting laser using Sb-based reflectors

被引：26

作者：

Blum, O

Klem, JF

Lear, KL

Vawter, GA

Kurtz, SR

机构：

[1] Sandia Natl Labs, Dept 1312, Albuquerque, NM 87185 USA

[2] Microopt Devices Inc, Albuquerque, NM 87109 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 22期

关键词：

vertical cavity surface emitting lasers; molecular beam epitaxial growth;

D O I：

10.1049/el:19971284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate, for the first time, 77K CW operation of an optically pumped, monolithic, all-epitaxial vertical cavity laser, emitting at 1.56 mu m. The laser incorporates 15 and 20 period Al0.12Ga0.88As0.56Sb0.44/AlAs0.56Sb0.44 distributed Bragg reflectors for the top and bottom mirrors, respectively. The entire structure was grown in a single growth run by molecular beam epitaxy.

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页码：1878 / 1880

页数：3

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