Cu/p-Si Schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide

被引：62

作者：

Casalino, M. ^{[1
]}

Sirleto, L. ^{[1
]}

Iodice, M. ^{[1
]}

Saffioti, N. ^{[1
]}

Gioffre, M. ^{[1
]}

Rendina, I. ^{[1
]}

Coppola, G. ^{[1
]}

机构：

[1] CNR, Inst Microelect & Microsyst, I-80131 Naples, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 24期

关键词：

copper; elemental semiconductors; infrared spectra; photodetectors; photoemission; Schottky barriers; silicon; silicon-on-insulator; waveguides; INJECTION;

D O I：

10.1063/1.3455339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, a near infrared all-silicon (all-Si) photodetector integrated into a silicon-on-insulator waveguide is demonstrated. The device is based on the internal photoemission effect through a metal/Si Schottky junction placed transversally to the optical field confined into the waveguide. The technological steps utilized to fabricate the device allow an efficiently monolithic integration with complementary metal-oxide semiconductor compatible structures. Preliminary results show a responsivity of 0.08 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behavior both in C and L band. Finally, an estimation of bandwidth for GHz range is deduced. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455339]

引用

页数：3

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