Cavity-enhanced photocurrent generation by 1.55 μm wavelengths linear absorption in a p-i-n diode embedded silicon microring resonator

被引：85

作者：

Chen, Hui ^{[1
]}

Luo, Xianshu ^{[1
]}

Poon, Andrew W. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Photon Device Lab, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 17期

关键词：

ION-IMPLANTATION; PHOTODIODES; BAND;

D O I：

10.1063/1.3257384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate 20-fold cavity-enhanced photocurrent generation in 1.55 mu m wavelengths in a p-i-n diode embedded silicon microring resonator with Q factor of 8000. The on-resonance wavelength shows linear responsivity of 0.12 mA/W upon 0 V bias and 0.25 mA/W upon -15 V bias. We attribute the linear absorption to surface-state absorption at the microring waveguide interfaces. Our experiments indicate that the photocurrent generation is linear to the estimated coupled power up to similar to 500 mu W. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3257384]

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页数：3

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共 17 条

[1] Photodetection in silicon beyond the band edge with surface states [J].

Baehr-Jones, T. ;

Hochberg, M. ;

Scherer, A. .

OPTICS EXPRESS, 2008, 16 (03) :1659-1668

[2] Surface encapsulation for low-loss silicon photonics [J].

Borselli, M. ;

Johnson, T. J. ;

Michael, C. P. ;

Henry, M. D. ;

Painter, O. .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

[3] Measuring the role of surface chemistry in silicon microphotonics [J].

Borselli, M ;

Johnson, TJ ;

Painter, O .

APPLIED PHYSICS LETTERS, 2006, 88 (13)

[4] Accurate measurement of scattering and absorption loss in microphotonc devices [J].

Borselli, Matthew ;

Johnson, Thomas J. ;

Painter, Oskar .

OPTICS LETTERS, 2007, 32 (20) :2954-2956

[5] Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption [J].

Bravo-Abad, J. ;

Ippen, E. P. ;

Soljacic, M. .

APPLIED PHYSICS LETTERS, 2009, 94 (24)

[6] Two-photon photovoltaic effect in silicon [J].

Fathpour, Sasan ;

Tsia, Kevin K. ;

Jalali, Bahram .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) :1211-1217

[7] All silicon infrared photodiodes: photo response and effects of processing temperature [J].

Geis, M. W. ;

Spector, S. J. ;

Grein, M. E. ;

Schulein, R. T. ;

Yoon, J. U. ;

Lennon, D. M. ;

Wynn, C. M. ;

Palmacci, S. T. ;

Gan, F. ;

Kaertner, F. X. ;

Lyszczarz, T. M. .

OPTICS EXPRESS, 2007, 15 (25) :16886-16895

[8] CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band [J].

Geis, M. W. ;

Spector, S. J. ;

Grein, M. E. ;

Schulein, R. T. ;

Yoon, J. U. ;

Lennon, D. M. ;

Deneault, S. ;

Gan, F. ;

Kaertner, F. X. ;

Lyszczarz, T. M. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (2-4) :152-154

[9] OPTICAL SPECTROSCOPY OF THE TRIVALENT SILICON DEFECT AT THE SI-SIO2 INTERFACE [J].

JOHNSON, NM ;

JACKSON, WB ;

MOYER, MD .

PHYSICAL REVIEW B, 1985, 31 (02) :1194-1197

[10] Self-induced optical modulation of the transmission through a high-Q silicon microdisk resonator [J].

Johnson, TJ ;

Borselli, M ;

Painter, O .

OPTICS EXPRESS, 2006, 14 (02) :817-831