Microwave and noise performance of SiGeBiCMOS HBT under cryogenic temperatures

被引：23

作者：

Pruvost, S ^{[1
]}

Delcourt, S

Telliez, I

Laurens, M

Bourzgui, NE

Danneville, F

Monroy, A

Dambrine, G

机构：

[1] USTL, UMR CNRS 8520, IEMN, F-59652 Villeneuve Dascq, France

[2] STMicroelect, Cent Res & Dev, F-38926 Crolles, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 02期

关键词：

BiCMOS; cryogenics; de-embedding; heterojunction bipolar transistors (HBT); low temperature; microwave; millimeter-waves; noise; small signal equivalent circuit;

D O I：

10.1109/LED.2004.841862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the microwave and noise performance of SiGe heterojunction bipolar transistors (HBTs) has been characterized when cooling down the temperature. It was found that SiGe HBTs (fabricated in the framework of BiCMOS process) exhibit a maximum oscillation frequency f(max) of about 292 GHz at 78 K, which represents an increase of about 30% with the value measured at room temperature. The noise performance has also been characterized at cryogenic temperatures, using an original de-embedding approach. Then, using the Hawkin's noise model in conjunction with an accurate small signal equivalent extraction, the four noise parameters have been estimated. The noise figure with a 50 Omega source impedance was measured to be equal to 1.5 dB at 40 GHz at 78 K, which is one of the lowest value reported for BiCMOS SiGe HBT in the millimeter-wave range.

引用

页码：105 / 108

页数：4

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