Minimizing Lateral Domain Collapse in Etched Poly(3-hexylthiophene)-block-Polylactide Thin Films for Improved Optoelectronic.Performance
被引:40
作者:
Botiz, Ioan
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Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USAArgonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
Botiz, Ioan
[1
]
Martinson, Alex B. F.
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Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
Argonne Natl Lab, Argonne NW Solar Energy Res Ctr, Argonne, IL 60439 USAArgonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
Martinson, Alex B. F.
[2
,3
]
Darling, Seth B.
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Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USAArgonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
Darling, Seth B.
[1
]
机构:
[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[3] Argonne Natl Lab, Argonne NW Solar Energy Res Ctr, Argonne, IL 60439 USA
Thin films of poly(3-hexylthiophene)-Noek-polylactide block copolymer exhibiting ordered lamellar morphology have been selectively etched to produce structured films that could be used in fabrication of idealized bulk heterojunctions for organic or hybrid solar energy devices. Etched poly(3-hexylthiophene) Films, after being rinsed in water to remove degraded polylactide fragments, were dried using various drying approaches that reduce or alleviate surface tension forces generated during liquid evaporation from the film. As emphasized by atomic force microscopy, X-ray diffraction, and emission photoluminescence, a reduction in domain collapse leads to improved molecular ordering in the plane perpendicular to the substrate and enhanced photoluminescence quenching when paired with fullerene Cm hydroxide electron acceptors.
机构:
Univ Calif Berkeley, Dept Chem Engn, Div Sci Mat, Lawrence Berkeley Labs, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Chem Engn, Div Sci Mat, Lawrence Berkeley Labs, Berkeley, CA 94720 USA
机构:
Univ Calif Berkeley, Dept Chem Engn, Div Sci Mat, Lawrence Berkeley Labs, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Chem Engn, Div Sci Mat, Lawrence Berkeley Labs, Berkeley, CA 94720 USA