Effect of spacer layer thickness on energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by organo-metallic vapor phase epitaxy

We studied the effect of spacer layer thickness on the resonant level width in resonant tunneling diodes (RTDs). GaInAs/InP RTDs were fabricated with various spacer layer thicknesses using organo-metallic vapor phase epitaxy; and the resonant level width was estimated. As a result, the resonant level width was found to decrease with increasing spacer layer thickness. To discuss this tendency, a theoretical model of the interface fluctuation between spacer layers and electrodes, caused by the random distribution of the impurity ions in electrodes, was proposed.