Enhanced carrier-mediated ferromagnetism in GaMnN by codoping of Mg

被引：37

作者：

Kim, KH

Lee, KJ

Kim, DJ ^{[1
]}

Kim, HJ

Ihm, YE

Kim, CG

Yoo, SH

Kim, CS

机构：

[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

[2] Korea Res Inst Chem Technol, Taejon 305600, South Korea

[3] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Taejon 305606, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 26期

关键词：

D O I：

10.1063/1.1586484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of Mg codoping on the structural, electronic transport, and magnetic properties of GaMnN films are investigated. Mg was shown to compete with Mn for incorporation into the growing films at impingement, and to replace Mn. The partial replacement of Mn by Mg in GaMnN has resulted in an increase of conductivity of the region. The enhanced transport property due to the highly efficient dopant Mg resulted in a remarkable increase of the saturation magnetization, indicating an interaction between Mn and Mg for the carrier-mediated ferromagnetism. The increased carrier population by Mg codoping enabled a full mediation among the Mn atoms, and consequently, suppressed the paramagnetic rise in the temperature-dependent magnetization measurement. (C) 2003 American Institute of Physics.

引用

页码：4755 / 4757

页数：3

共 16 条

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Cullity B.D., 1972, Introduction to Magnetic Materials

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