Numerical simulation for the formation of nanostructures on the Stranski-Krastanow systems by surface undulation

被引：15

作者：

Chiu, C.-H. ^{[1
]}

Huang, Z. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 11期

关键词：

D O I：

10.1063/1.2743734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nanostructure formation of the Stranski-Krastanow (SK) systems is investigated by simulating the surface undulation of the systems driven by the surface diffusion mechanism. Of particular interest is how the surface undulation leads to the development of faceted nanostructures and wetting layers. The results reveal that the development exhibits three common features in the coarsening SK systems, while the development also results in distinct film morphologies, controlled by the maximum surface coverage of faceted islands. The maximum surface coverage depends on the film thickness, the ratio between the two characteristic lengths of the SK system, and the effective surface energy density of flat film. (c) 2007 American Institute of Physics.

引用

页数：10

共 64 条

[51] MORPHOLOGICAL INSTABILITY IN EPITAXIALLY STRAINED DISLOCATION-FREE SOLID FILMS [J].

SPENCER, BJ ;

VOORHEES, PW ;

DAVIS, SH .

PHYSICAL REVIEW LETTERS, 1991, 67 (26) :3696-3699

[52] ON THE STABILITY OF SURFACES OF STRESSED SOLIDS [J].

SROLOVITZ, DJ .

ACTA METALLURGICA, 1989, 37 (02) :621-625

[53] Epitaxial films stabilized by long-range forces [J].

Suo, ZG ;

Zhang, ZY .

PHYSICAL REVIEW B, 1998, 58 (08) :5116-5120

[54] Nucleationless three-dimensional island formation in low-misfit heteroepitaxy [J].

Sutter, P ;

Lagally, MG .

PHYSICAL REVIEW LETTERS, 2000, 84 (20) :4637-4640

[55] Evolution equation for a thin epitaxial film on a deformable substrate [J].

Tekalign, WT ;

Spencer, BJ .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5505-5512

[56] STRESS-INDUCED LAYER-BY-LAYER GROWTH OF GE ON SI(100) [J].

TERSOFF, J .

PHYSICAL REVIEW B, 1991, 43 (11) :9377-9380

[57] Barrierless formation and faceting of SiGe islands on Si(001) -: art. no. 196104 [J].

Tersoff, J ;

Spencer, BJ ;

Rastelli, A ;

von Känel, H .

PHYSICAL REVIEW LETTERS, 2002, 89 (19)

[58] COMPETING RELAXATION MECHANISMS IN STRAINED LAYERS [J].

TERSOFF, J ;

LEGOUES, FK .

PHYSICAL REVIEW LETTERS, 1994, 72 (22) :3570-3573

[59] SHAPE TRANSITION IN GROWTH OF STRAINED ISLANDS - SPONTANEOUS FORMATION OF QUANTUM WIRES [J].

TERSOFF, J ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1993, 70 (18) :2782-2785

[60] Instability-driven SiGe island growth [J].

Tromp, RM ;

Ross, FM ;

Reuter, MC .

PHYSICAL REVIEW LETTERS, 2000, 84 (20) :4641-4644

← 1 2 3 4 5 6 7 →