Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

被引：15

作者：

Masutomi, Ryuichi ^{[1
]}

Hio, Masayuki ^{[1
]}

Mochizuki, Toshimitsu ^{[1
]}

Okamoto, Tohru ^{[1
]}

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 20期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2740579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at in situ cleaved surfaces of p-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems. (C) 2007 American Institute of Physics.

引用

页数：3

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