Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces

被引：10

作者：

Aristov, VY

Zhilin, VM

Grupp, C

Taleb-Ibrahimi, A

Kim, HJ

Mangat, PS

Soukiassian, P

Le Lay, G

机构：

[1] CNRS, CRMC2, F-13288 Marseille 09, France

[2] Russian Acad Sci, ISSP, Chernogolovka 142432, Moscow District, Russia

[3] Univ Paris Sud, LURE, F-91405 Orsay, France

[4] Dongguk Univ, Dept Semicond Sci, Seoul, South Korea

[5] Motorola Inc, APR&D Lab Semicond, Schaumburg, IL 60196 USA

[6] Ctr Etud Saclay, CEA, DSM,DRECAM, SPCSI,SIMA, F-91191 Gif Sur Yvette, France

[7] Univ Paris Sud, Dept Phys, F-91405 Orsay, France

来源：

APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期

基金：

俄罗斯基础研究基金会;

关键词：

photoemission; InSb(110); semiconductor surface;

D O I：

10.1016/S0169-4332(00)00402-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Tiny amounts of cesium adsorbed on cleaved InSb(110) surfaces result in a strong downward band bending (BB) and creates a two-dimensional (2D) electron channel in the sub-surface region. For the first time, electron emission arising from this channel was observed for this material. We compare it to the similar situation mit previously with InAs(110). in this last case, new high-resolution measurements allow to determine the dispersions of the quantized energy levels, and to derive the average effective mass of the carriers in the channel. For both systems, self-consistent calculations and model-function curve fittings support the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：263 / 267

页数：5

共 17 条

[1] THE AG/N-INSB(110) INTERFACE AT 10-K - 1ST OBSERVATION OF AN ANOMALOUS FERMI-LEVEL PINNING [J].