Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

被引：53

作者：

Lu, JG ^{[1
]}

Ye, ZZ ^{[1
]}

Wang, L ^{[1
]}

Huang, JY ^{[1
]}

Zhao, BH ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2002年 / 5卷 / 06期

关键词：

N-dope ZnO films; p-type conduction; SS-CVD; properties;

D O I：

10.1016/S1369-8001(02)00114-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N-doped p-type ZnO films have been synthesized on alpha-Al2O3 (0001) substrate by solid-source chemical vapor deposition using Zn(CH3COO)(2).2H(2)O as the precursor and CH3COONH4 as the nitrogen source. The properties for ZnO films are dependent greatly on the growth conditions. Results show that the best electrical properties of the p-type film, such as carrier density N = 9.8 x 10(17) cm(-3), resistivity rho = 20 Omega cm and Hall mobility mu = 0.97 cm(2)/V s, were induced at the substrate temperature of 500degreesC with a precursor temperature of 250degreesC and a nitrogen source of 150degreesC, under which the highest mixed orientation for (100) and (110) planes of films was also achieved. The p-type ZnO films possess a transmittance of about 90% in visible region and a band gap of about 3.20 eV at room temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：491 / 496

页数：6

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